Transport and absorption in strain-compensated Si/Si1-xGex multiple quantum well and cascade structures deposited on Si0.5Ge0.5 pseudosubstrates: Fid-Bau Portal

Transport and absorption in strain-compensated Si/Si1-xGex multiple quantum well and cascade structures deposited on Si0.5Ge0.5 pseudosubstrates

Grutzmacher, D. / Tsujino, S. / Falub, C. / Borak, A. / Diehl, L. / Muller, E. / Sigg, H. / Gennser, U. / Fromherz, T. / Meduna, M.

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Transport and absorption in strain-compensated Si/Si1-xGex multiple quantum well and cascade structures deposited on Si0.5Ge0.5 pseudosubstrates

Grutzmacher, D. / Tsujino, S. / Falub, C. / Borak, A. / Diehl, L. / Muller, E. / Sigg, H. / Gennser, U. / Fromherz, T. / Meduna, M.

Transport and absorption in strain-compensated Si/Si1-xGex multiple quantum well and cascade structures deposited on Si0.5Ge0.5 pseudosubstrates

Grutzmacher, D. / Tsujino, S. / Falub, C. / Borak, A. / Diehl, L. / Muller, E. / Sigg, H. / Gennser, U. / Fromherz, T. / Meduna, M.

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Title:

Transport and absorption in strain-compensated Si/Si1-xGex multiple quantum well and cascade structures deposited on Si0.5Ge0.5 pseudosubstrates

Contributors:

Grutzmacher, D. (author) / Tsujino, S. (author) / Falub, C. (author) / Borak, A. (author) / Diehl, L. (author) / Muller, E. (author) / Sigg, H. (author) / Gennser, U. (author) / Fromherz, T. (author) / Meduna, M. (author)

Published in:

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 8 ; 401-409

Publication date:

2005-01-01

Size:

9 pages

ISSN:

1369-8001

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.38152

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