Quantitative strain and stress measurements in Ge/Si dual channels grown on a Si0.5Ge0.5 virtual substrate: Fid-Bau Portal

Quantitative strain and stress measurements in Ge/Si dual channels grown on a Si0.5Ge0.5 virtual substrate

Cherkashin, N. / Hytch, M. J. / Snoeck, E. / Claverie, A. / Hartmann, J. M. / Bogumilowicz, Y.

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Quantitative strain and stress measurements in Ge/Si dual channels grown on a Si0.5Ge0.5 virtual substrate

Cherkashin, N. / Hytch, M. J. / Snoeck, E. / Claverie, A. / Hartmann, J. M. / Bogumilowicz, Y.

Quantitative strain and stress measurements in Ge/Si dual channels grown on a Si0.5Ge0.5 virtual substrate

Cherkashin, N. / Hytch, M. J. / Snoeck, E. / Claverie, A. / Hartmann, J. M. / Bogumilowicz, Y.

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Title:

Quantitative strain and stress measurements in Ge/Si dual channels grown on a Si0.5Ge0.5 virtual substrate

Contributors:

Cherkashin, N. (author) / Hytch, M. J. (author) / Snoeck, E. (author) / Claverie, A. (author) / Hartmann, J. M. (author) / Bogumilowicz, Y. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 124-125 ; 118-122

Publication date:

2005-01-01

Size:

5 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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