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Development of Epitaxial SiC Processes Suitable for Bipolar Power Devices

Sumakeris, J. J. / Das, M. K. / Ha, S. / Hurt, E. / Irvine, K. / Paisley, M. J. / O Loughlin, M. J. / Palmour, J. W. / Skowronski, M. / Hobgood, H. M.

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Development of Epitaxial SiC Processes Suitable for Bipolar Power Devices

Sumakeris, J. J. / Das, M. K. / Ha, S. / Hurt, E. / Irvine, K. / Paisley, M. J. / O Loughlin, M. J. / Palmour, J. W. / Skowronski, M. / Hobgood, H. M.

Development of Epitaxial SiC Processes Suitable for Bipolar Power Devices

Sumakeris, J. J. / Das, M. K. / Ha, S. / Hurt, E. / Irvine, K. / Paisley, M. J. / O Loughlin, M. J. / Palmour, J. W. / Skowronski, M. / Hobgood, H. M.

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Title:

Development of Epitaxial SiC Processes Suitable for Bipolar Power Devices

Contributors:

Sumakeris, J. J. (author) / Das, M. K. (author) / Ha, S. (author) / Hurt, E. (author) / Irvine, K. (author) / Paisley, M. J. (author) / O Loughlin, M. J. (author) / Palmour, J. W. (author) / Skowronski, M. (author) / Hobgood, H. M. (author)

Published in:

Silicon Carbide and Related Materials 2004 ; 155-158

MATERIALS SCIENCE FORUM ; 483/485

Publication date:

2005-01-01

Size:

4 pages

ISSN:

Type of media:

Article (Journal)

Type of material:

Print

Language:

English

Classification:

© Metadata Copyright the British Library Board and other contributors. All rights reserved.

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