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4H-SiC Epitaxial Growth for High-Power Devices

Tsuchida, H. / Kamata, I. / Jikimoto, T. / Miyanagi, T. / Izumi, K.

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4H-SiC Epitaxial Growth for High-Power Devices

Tsuchida, H. / Kamata, I. / Jikimoto, T. / Miyanagi, T. / Izumi, K.

4H-SiC Epitaxial Growth for High-Power Devices

Tsuchida, H. / Kamata, I. / Jikimoto, T. / Miyanagi, T. / Izumi, K.

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Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

4H-SiC Epitaxial Growth for High-Power Devices

Contributors:

Tsuchida, H. (author) / Kamata, I. (author) / Jikimoto, T. (author) / Miyanagi, T. (author) / Izumi, K. (author) / Bergman, P. / Janzen, E.

Published in:

Silicon Carbide and Related Materials 2002 ; 131-136

MATERIALS SCIENCE FORUM ; 433/436

Publication date:

2003-01-01

Size:

6 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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