A platform for research: civil engineering, architecture and urbanism
The Search for Near Interface Oxide Traps - First-Principles Calculations on Intrinsic SiO~2 Defects
The Search for Near Interface Oxide Traps - First-Principles Calculations on Intrinsic SiO~2 Defects
The Search for Near Interface Oxide Traps - First-Principles Calculations on Intrinsic SiO~2 Defects
Knaup, J. M. (author) / Deak, P. (author) / Gali, A. (author) / Hajnal, Z. (author) / Frauenheim, T. (author) / Choyke, J. W. (author) / Nipoti, R. / Poggi, A. / Scorzoni, A.
2005-01-01
4 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Point defects in silicon, first-principles calculations
British Library Online Contents | 2000
|First-Principles Calculations of Metal/Oxide Interfaces: Effects of Interface Stoichiometry
British Library Online Contents | 2005
|First-Principles Calculations of Co Impurities and Native Defects in ZnO
British Library Online Contents | 2002
|First-principles investigation of defects at GaAs/oxide interfaces
British Library Online Contents | 2016
|First principles calculations for iodine atom diffusion in SiC with point defects
British Library Online Contents | 2018
|