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First-principles investigation of defects at GaAs/oxide interfaces

Houssa, M. / Iordanidou, K. / Afanas’ev, V.V. / Stesmans, A.

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First-principles investigation of defects at GaAs/oxide interfaces

Houssa, M. / Iordanidou, K. / Afanas’ev, V.V. / Stesmans, A.

First-principles investigation of defects at GaAs/oxide interfaces

Houssa, M. / Iordanidou, K. / Afanas’ev, V.V. / Stesmans, A.

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Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

First-principles investigation of defects at GaAs/oxide interfaces

Contributors:

Houssa, M. (author) / Iordanidou, K. (author) / Afanas’ev, V.V. (author) / Stesmans, A. (author)

Published in:

Materials science in semiconductor processing ; 42 ; 239-241

Publication date:

2016-01-01

Size:

3 pages

ISSN:

1369-8001

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.38152

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