Ar Annealing at 1600^oC and 1650^oC of Al^+ Implanted p^+/n 4H-SiC Diodes: Analysis of the J-V Characteristics Versus Annealing Temperature: Fid-Bau Portal

Ar Annealing at 1600^oC and 1650^oC of Al^+ Implanted p^+/n 4H-SiC Diodes: Analysis of the J-V Characteristics Versus Annealing Temperature

Bergamini, F. / Moscatelli, F. / Canino, M. / Poggi, A. / Nipoti, R.

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Ar Annealing at 1600^oC and 1650^oC of Al^+ Implanted p^+/n 4H-SiC Diodes: Analysis of the J-V Characteristics Versus Annealing Temperature

Bergamini, F. / Moscatelli, F. / Canino, M. / Poggi, A. / Nipoti, R.

Ar Annealing at 1600^oC and 1650^oC of Al^+ Implanted p^+/n 4H-SiC Diodes: Analysis of the J-V Characteristics Versus Annealing Temperature

Bergamini, F. / Moscatelli, F. / Canino, M. / Poggi, A. / Nipoti, R.

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Title:

Ar Annealing at 1600^oC and 1650^oC of Al^+ Implanted p^+/n 4H-SiC Diodes: Analysis of the J-V Characteristics Versus Annealing Temperature

Contributors:

Bergamini, F. (author) / Moscatelli, F. (author) / Canino, M. (author) / Poggi, A. (author) / Nipoti, R. (author) / Nipoti, R. / Poggi, A. / Scorzoni, A.

Published in:

Silicon Carbide and Related Materials 2004 ; 625-628

MATERIALS SCIENCE FORUM ; 483/485

Publication date:

2005-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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