Effect of high temperature annealing (T > 1650 °C) on the morphological and electrical properties of p-type implanted 4H-SiC layers: Fid-Bau Portal

Effect of high temperature annealing (T > 1650 °C) on the morphological and electrical properties of p-type implanted 4H-SiC layers

Spera, M. / Corso, D. / Di Franco, S. / Greco, G. / Severino, A. / Fiorenza, P. / Giannazzo, F. / Roccaforte, F.

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Effect of high temperature annealing (T > 1650 °C) on the morphological and electrical properties of p-type implanted 4H-SiC layers

Spera, M. / Corso, D. / Di Franco, S. / Greco, G. / Severino, A. / Fiorenza, P. / Giannazzo, F. / Roccaforte, F.

Effect of high temperature annealing (T > 1650 °C) on the morphological and electrical properties of p-type implanted 4H-SiC layers

Spera, M. / Corso, D. / Di Franco, S. / Greco, G. / Severino, A. / Fiorenza, P. / Giannazzo, F. / Roccaforte, F.

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Order at Subito €

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Document information

Title:

Effect of high temperature annealing (T > 1650 °C) on the morphological and electrical properties of p-type implanted 4H-SiC layers

Contributors:

Spera, M. (author) / Corso, D. (author) / Di Franco, S. (author) / Greco, G. (author) / Severino, A. (author) / Fiorenza, P. (author) / Giannazzo, F. (author) / Roccaforte, F. (author)

Published in:

Materials science in semiconductor processing ; 93 ; 274-279

Publication date:

2019-01-01

Size:

6 pages

ISSN:

1369-8001

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.38152

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