Room Temperature Annealing Effects on Leakage Current of Ion Implanted p^+n 4H-SiC Diodes: Fid-Bau Portal

Room Temperature Annealing Effects on Leakage Current of Ion Implanted p^+n 4H-SiC Diodes

Moscatelli, F. / Bergamini, F. / Poggi, A. / Passini, M. / Tamarri, F. / Bianconi, M. / Nipoti, R.

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Room Temperature Annealing Effects on Leakage Current of Ion Implanted p^+n 4H-SiC Diodes

Moscatelli, F. / Bergamini, F. / Poggi, A. / Passini, M. / Tamarri, F. / Bianconi, M. / Nipoti, R.

Room Temperature Annealing Effects on Leakage Current of Ion Implanted p^+n 4H-SiC Diodes

Moscatelli, F. / Bergamini, F. / Poggi, A. / Passini, M. / Tamarri, F. / Bianconi, M. / Nipoti, R.

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Document information

Title:

Room Temperature Annealing Effects on Leakage Current of Ion Implanted p^+n 4H-SiC Diodes

Contributors:

Moscatelli, F. (author) / Bergamini, F. (author) / Poggi, A. (author) / Passini, M. (author) / Tamarri, F. (author) / Bianconi, M. (author) / Nipoti, R. (author)

Published in:

MATERIALS SCIENCE FORUM ; 600/603 ; 1027-1030

Publication date:

2009-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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