High Field Effect Mobility in Si Face 4H-SiC MOSFET Made on Sublimation Grown Epitaxial Material: Fid-Bau Portal

High Field Effect Mobility in Si Face 4H-SiC MOSFET Made on Sublimation Grown Epitaxial Material

Sveinbjornsson, E. O. / Olafsson, H. O. / Gudjonsson, G. / Allerstam, F. / Nilsson, P. A. / Syvajarvi, M. / Yakimova, R. / Hallin, C. / Rodle, T. / Jos, R.

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High Field Effect Mobility in Si Face 4H-SiC MOSFET Made on Sublimation Grown Epitaxial Material

Sveinbjornsson, E. O. / Olafsson, H. O. / Gudjonsson, G. / Allerstam, F. / Nilsson, P. A. / Syvajarvi, M. / Yakimova, R. / Hallin, C. / Rodle, T. / Jos, R.

High Field Effect Mobility in Si Face 4H-SiC MOSFET Made on Sublimation Grown Epitaxial Material

Sveinbjornsson, E. O. / Olafsson, H. O. / Gudjonsson, G. / Allerstam, F. / Nilsson, P. A. / Syvajarvi, M. / Yakimova, R. / Hallin, C. / Rodle, T. / Jos, R.

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Title:

High Field Effect Mobility in Si Face 4H-SiC MOSFET Made on Sublimation Grown Epitaxial Material

Contributors:

Sveinbjornsson, E. O. (author) / Olafsson, H. O. (author) / Gudjonsson, G. (author) / Allerstam, F. (author) / Nilsson, P. A. (author) / Syvajarvi, M. (author) / Yakimova, R. (author) / Hallin, C. (author) / Rodle, T. (author) / Jos, R. (author)

Published in:

Silicon Carbide and Related Materials 2004 ; 841-844

MATERIALS SCIENCE FORUM ; 483/485

Publication date:

2005-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

Gudjonsson, G. / Olafsson, H. O. / Allerstam, F. et al. | British Library Online Contents | 2005

Domain misorientation in sublimation grown 4H SiC epitaxial layers

Tuominen, M. / Yakimova, R. / Syvajarvi, M. et al. | British Library Online Contents | 1999

Domain Occurrence in SiC Epitaxial Layers Grown by Sublimation

Tuominen, M. / Yakimova, R. / Kakanakova-Georgieva, A. et al. | British Library Online Contents | 1998

Investigation of 3C-SiC Epitaxial Layers Grown by Sublimation Epitaxy

Davydov, D. V. / Lebedev, A. A. / Tregubova, A. S. et al. | British Library Online Contents | 2000

High Field Effect Mobility in 6H-SiC MOSFET with Gate Oxides Grown in Alumina Environment

Allerstam, F. / Gudjonsson, G. / Olafsson, H. O. et al. | British Library Online Contents | 2005