Field Effect Mobility in n-Channel Si Face 4H-SiC MOSFET with Gate Oxide Grown on Aluminum Ion-Implanted Material

Gudjonsson, G. / Olafsson, H. O. / Allerstam, F. et al. | British Library Online Contents | 2005

Domain misorientation in sublimation grown 4H SiC epitaxial layers

Tuominen, M. / Yakimova, R. / Syvajarvi, M. et al. | British Library Online Contents | 1999

Domain Occurrence in SiC Epitaxial Layers Grown by Sublimation

Tuominen, M. / Yakimova, R. / Kakanakova-Georgieva, A. et al. | British Library Online Contents | 1998

Investigation of 3C-SiC Epitaxial Layers Grown by Sublimation Epitaxy

Davydov, D. V. / Lebedev, A. A. / Tregubova, A. S. et al. | British Library Online Contents | 2000

High Field Effect Mobility in 6H-SiC MOSFET with Gate Oxides Grown in Alumina Environment

Allerstam, F. / Gudjonsson, G. / Olafsson, H. O. et al. | British Library Online Contents | 2005