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High Field Effect Mobility in 6H-SiC MOSFET with Gate Oxides Grown in Alumina Environment
High Field Effect Mobility in 6H-SiC MOSFET with Gate Oxides Grown in Alumina Environment
High Field Effect Mobility in 6H-SiC MOSFET with Gate Oxides Grown in Alumina Environment
Allerstam, F. (author) / Gudjonsson, G. (author) / Olafsson, H. O. (author) / Sveinbjornsson, E. O. (author) / Rodle, T. (author) / Jos, R. (author) / Nipoti, R. / Poggi, A. / Scorzoni, A.
2005-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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