A platform for research: civil engineering, architecture and urbanism
Steady-State and Transient Characteristics of High-Voltage 4H-SiC Junction Diodes
Steady-State and Transient Characteristics of High-Voltage 4H-SiC Junction Diodes
Steady-State and Transient Characteristics of High-Voltage 4H-SiC Junction Diodes
Ivanov, P. A. (author) / Levinshtein, M. E. (author) / Mnatsakanov, T. T. (author) / Palmour, J. W. (author) / Singh, R. (author) / Irvin, K. G. (author) / Das, M. (author) / Nipoti, R. / Poggi, A. / Scorzoni, A.
2005-01-01
4 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
British Library Online Contents | 2000
|High Voltage Silicon Carbide Schottky Diodes with Single Zone Junction Termination Extension
British Library Online Contents | 2007
|Silicon substrate effects on the current-voltage characteristics of advanced p-n junction diodes
British Library Online Contents | 2000
|Current Voltage Characteristics of High-Voltage 4H Silicon Carbide Diodes
British Library Online Contents | 2000
|British Library Online Contents | 2006
|