Gamma and Proton Irradiation Effects on 4H-SiC Depletion-Mode Trench JFETs: Fid-Bau Portal

Gamma and Proton Irradiation Effects on 4H-SiC Depletion-Mode Trench JFETs

Merrett, J. N. / Williams, J. R. / Cressler, J. D. / Sutton, A. / Cheng, L. / Bondarenko, V. / Sankin, I. / Seale, D. / Mazzola, M. S. / Krishnan, B.

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Gamma and Proton Irradiation Effects on 4H-SiC Depletion-Mode Trench JFETs

Merrett, J. N. / Williams, J. R. / Cressler, J. D. / Sutton, A. / Cheng, L. / Bondarenko, V. / Sankin, I. / Seale, D. / Mazzola, M. S. / Krishnan, B.

Gamma and Proton Irradiation Effects on 4H-SiC Depletion-Mode Trench JFETs

Merrett, J. N. / Williams, J. R. / Cressler, J. D. / Sutton, A. / Cheng, L. / Bondarenko, V. / Sankin, I. / Seale, D. / Mazzola, M. S. / Krishnan, B.

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Document information

Title:

Gamma and Proton Irradiation Effects on 4H-SiC Depletion-Mode Trench JFETs

Contributors:

Merrett, J. N. (author) / Williams, J. R. (author) / Cressler, J. D. (author) / Sutton, A. (author) / Cheng, L. (author) / Bondarenko, V. (author) / Sankin, I. (author) / Seale, D. (author) / Mazzola, M. S. (author) / Krishnan, B. (author)

Published in:

Silicon Carbide and Related Materials 2004 ; 885-888

MATERIALS SCIENCE FORUM ; 483/485

Publication date:

2005-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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