A platform for research: civil engineering, architecture and urbanism
Gate-Drive Voltage Design for 600-V Vertical-Trench Normally-Off SiC JFETs toward 94% Efficiency Server Power Supply
Gate-Drive Voltage Design for 600-V Vertical-Trench Normally-Off SiC JFETs toward 94% Efficiency Server Power Supply
Gate-Drive Voltage Design for 600-V Vertical-Trench Normally-Off SiC JFETs toward 94% Efficiency Server Power Supply
Akiyama, S. (author) / Katoh, K. (author) / Shimizu, H. (author) / Hatanaka, A. (author) / Ogawa, T. (author) / Yokoyama, N. (author) / Ishikawa, K. (author) / Okumura, H. / Harima, H. / Kimoto, T.
2014-01-01
4 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Design and Yield of 9 kV Unipolar Normally-ON Vertical-Channel SiC JFETs
British Library Online Contents | 2011
|6A, 1kV 4H-SiC Normally-Off Trenched-and-Implanted Vertical JFETs
British Library Online Contents | 2004
|A Comparison of 1200 V Normally-OFF & Normally-on Vertical Trench SiC Power JFET Devices
British Library Online Contents | 2011
|British Library Online Contents | 2010
|Fault Protection System for Current Source Inverter with Normally on SiC JFETs
British Library Online Contents | 2011
|