High temperature and high frequency characteristics of AlGaN/GaN MOS-HFETs with photochemical vapor deposition SiO2 layer: Fid-Bau Portal

High temperature and high frequency characteristics of AlGaN/GaN MOS-HFETs with photochemical vapor deposition SiO2 layer

Wang, C. K. / Chuang, R. W. / Chang, S. J. / Su, Y. K. / Wei, S. C. / Lin, T. K. / Ko, T. K. / Chiou, Y. Z. / Tang, J. J.

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High temperature and high frequency characteristics of AlGaN/GaN MOS-HFETs with photochemical vapor deposition SiO2 layer

Wang, C. K. / Chuang, R. W. / Chang, S. J. / Su, Y. K. / Wei, S. C. / Lin, T. K. / Ko, T. K. / Chiou, Y. Z. / Tang, J. J.

High temperature and high frequency characteristics of AlGaN/GaN MOS-HFETs with photochemical vapor deposition SiO2 layer

Wang, C. K. / Chuang, R. W. / Chang, S. J. / Su, Y. K. / Wei, S. C. / Lin, T. K. / Ko, T. K. / Chiou, Y. Z. / Tang, J. J.

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Document information

Title:

High temperature and high frequency characteristics of AlGaN/GaN MOS-HFETs with photochemical vapor deposition SiO2 layer

Contributors:

Wang, C. K. (author) / Chuang, R. W. (author) / Chang, S. J. (author) / Su, Y. K. (author) / Wei, S. C. (author) / Lin, T. K. (author) / Ko, T. K. (author) / Chiou, Y. Z. (author) / Tang, J. J. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 119 ; 25-28

Publication date:

2005-01-01

Size:

4 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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