A platform for research: civil engineering, architecture and urbanism
A platform for research: civil engineering, architecture and urbanism
Demonstration of AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with silicon-oxy-nitride as the gate insulator
Demonstration of AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with silicon-oxy-nitride as the gate insulator
Demonstration of AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with silicon-oxy-nitride as the gate insulator
Balachander, K. (author) / Arulkumaran, S. (author) / Egawa, T. (author) / Sano, Y. (author) / Baskar, K. (author)
MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 119 ; 36-40
2005-01-01
5 pages
Article (Journal)
English
DDC:
620.11
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