Iridium oxides based gate interface of AlGaN/GaN high electron mobility transistors formed by high temperature oxidation: Fid-Bau Portal

Iridium oxides based gate interface of AlGaN/GaN high electron mobility transistors formed by high temperature oxidation

Lalinsky, T. / Vallo, M. / Vanko, G. / Dobrocka, E. / Vincze, A. / Osvald, J. / Ryger, I. / Dzuba, J.

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Iridium oxides based gate interface of AlGaN/GaN high electron mobility transistors formed by high temperature oxidation

Lalinsky, T. / Vallo, M. / Vanko, G. / Dobrocka, E. / Vincze, A. / Osvald, J. / Ryger, I. / Dzuba, J.

Iridium oxides based gate interface of AlGaN/GaN high electron mobility transistors formed by high temperature oxidation

Lalinsky, T. / Vallo, M. / Vanko, G. / Dobrocka, E. / Vincze, A. / Osvald, J. / Ryger, I. / Dzuba, J.

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Title:

Iridium oxides based gate interface of AlGaN/GaN high electron mobility transistors formed by high temperature oxidation

Contributors:

Lalinsky, T. (author) / Vallo, M. (author) / Vanko, G. (author) / Dobrocka, E. (author) / Vincze, A. (author) / Osvald, J. (author) / Ryger, I. (author) / Dzuba, J. (author)

Published in:

APPLIED SURFACE SCIENCE ; 283 ; 160-167

Publication date:

2013-01-01

Size:

8 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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