A platform for research: civil engineering, architecture and urbanism
Iridium oxides based gate interface of AlGaN/GaN high electron mobility transistors formed by high temperature oxidation
Iridium oxides based gate interface of AlGaN/GaN high electron mobility transistors formed by high temperature oxidation
Iridium oxides based gate interface of AlGaN/GaN high electron mobility transistors formed by high temperature oxidation
Lalinsky, T. (author) / Vallo, M. (author) / Vanko, G. (author) / Dobrocka, E. (author) / Vincze, A. (author) / Osvald, J. (author) / Ryger, I. (author) / Dzuba, J. (author)
APPLIED SURFACE SCIENCE ; 283 ; 160-167
2013-01-01
8 pages
Article (Journal)
English
DDC:
621.35
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Magnetoresistance of AlGaN/GaN High Electron Mobility Transistors on Silicon
British Library Online Contents | 2014
|High temperature current transport in gate oxides based (GaN)/AlGaN/GaN Schottky diodes
British Library Online Contents | 2018
|British Library Online Contents | 2005
|Interface-Controlled, High-Mobility Organic Transistors
British Library Online Contents | 2007
|British Library Online Contents | 2002
|