Demonstration of AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with silicon-oxy-nitride as the gate insulator: Fid-Bau Portal

Demonstration of AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with silicon-oxy-nitride as the gate insulator

Balachander, K. / Arulkumaran, S. / Egawa, T. / Sano, Y. / Baskar, K.

Zugriff

Zugriff über TIB

Verfügbarkeit in meiner Bibliothek prüfen

Bestellung bei Subito €

Seitennavigation

Dokumentinformationen

Ähnliche Titel

Exportieren, teilen und zitieren

Demonstration of AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with silicon-oxy-nitride as the gate insulator

Balachander, K. / Arulkumaran, S. / Egawa, T. / Sano, Y. / Baskar, K.

Demonstration of AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with silicon-oxy-nitride as the gate insulator

Balachander, K. / Arulkumaran, S. / Egawa, T. / Sano, Y. / Baskar, K.

Zugriff

Zugriff über TIB

Verfügbarkeit in meiner Bibliothek prüfen

Bestellung bei Subito €

Seitennavigation

Dokumentinformationen

Ähnliche Titel

Exportieren, teilen und zitieren

Dokumentinformationen

Titel:

Demonstration of AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with silicon-oxy-nitride as the gate insulator

Beteiligte:

Balachander, K. (Autor:in) / Arulkumaran, S. (Autor:in) / Egawa, T. (Autor:in) / Sano, Y. (Autor:in) / Baskar, K. (Autor:in)

Erschienen in:

MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 119 ; 36-40

Erscheinungsdatum:

01.01.2005

Format / Umfang:

5 pages

ISSN:

0921-5107

Medientyp:

Aufsatz (Zeitschrift)

Format:

Sprache:

Englisch

Klassifikation:

DDC: 620.11

Roensch, S. / Sizov, V. / Yagi, T. et al. | British Library Online Contents | 2014

Iridium oxides based gate interface of AlGaN/GaN high electron mobility transistors formed by high temperature oxidation

Lalinsky, T. / Vallo, M. / Vanko, G. et al. | British Library Online Contents | 2013

High‐Temperature and High‐Electron Mobility Metal‐Oxide‐Semiconductor Field‐Effect Transistors Based on N‐Type Diamond

Liao, Meiyong / Sun, Huanying / Koizumi, Satoshi | Wiley | 2024

Freier Zugriff

High‐Temperature and High‐Electron Mobility Metal‐Oxide‐Semiconductor Field‐Effect Transistors Based on N‐Type Diamond

Liao, Meiyong / Sun, Huanying / Koizumi, Satoshi | Wiley | 2024

Freier Zugriff

Metal-Insulator-Metal Transistors

Stallinga, P. / Roy, V. A. / Xu, Z. X. et al. | British Library Online Contents | 2008

Nach oben