Observation on photoluminescence evolution in 300 keV self-ion implanted and annealed silicon: Fid-Bau Portal

Observation on photoluminescence evolution in 300 keV self-ion implanted and annealed silicon

Yang, Y. / Bao, J.M. / Jin, Y.X. / Li, L. / Yang, J. / Wang, C.

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Observation on photoluminescence evolution in 300 keV self-ion implanted and annealed silicon

Yang, Y. / Bao, J.M. / Jin, Y.X. / Li, L. / Yang, J. / Wang, C.

Observation on photoluminescence evolution in 300 keV self-ion implanted and annealed silicon

Yang, Y. / Bao, J.M. / Jin, Y.X. / Li, L. / Yang, J. / Wang, C.

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Document information

Title:

Observation on photoluminescence evolution in 300 keV self-ion implanted and annealed silicon

Contributors:

Yang, Y. (author) / Bao, J.M. (author) / Jin, Y.X. (author) / Li, L. (author) / Yang, J. (author) / Wang, C. (author)

Published in:

MATERIALS TECHNOLOGY ; 27 ; 130-132

Publication date:

2012-01-01

Size:

3 pages

ISSN:

1066-7857

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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