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Gate-recessed delta-doping enhancement-mode Al0.2Ga0.8As/In0.15Ga0.85As PHEMTs using a new citric buffer etchant
Gate-recessed delta-doping enhancement-mode Al0.2Ga0.8As/In0.15Ga0.85As PHEMTs using a new citric buffer etchant
Gate-recessed delta-doping enhancement-mode Al0.2Ga0.8As/In0.15Ga0.85As PHEMTs using a new citric buffer etchant
Yarn, K. F. (author) / Liao, C. I. (author) / Wang, Y. H. (author) / Houng, M. P. (author) / Chure, M. C. (author)
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 8 ; 550-554
2005-01-01
5 pages
Article (Journal)
English
DDC:
621.38152
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