Growth process of b-FeSi2 epitaxial film on Si(111) by molecular beam epitaxy: Fid-Bau Portal

Growth process of b-FeSi2 epitaxial film on Si(111) by molecular beam epitaxy

Ji, S. Y. / Wang, J. F. / Lim, J. W. / Isshiki, M.

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Growth process of b-FeSi2 epitaxial film on Si(111) by molecular beam epitaxy

Ji, S. Y. / Wang, J. F. / Lim, J. W. / Isshiki, M.

Growth process of b-FeSi2 epitaxial film on Si(111) by molecular beam epitaxy

Ji, S. Y. / Wang, J. F. / Lim, J. W. / Isshiki, M.

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Check availability in my library

Order at Subito €

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Document information

Title:

Growth process of b-FeSi2 epitaxial film on Si(111) by molecular beam epitaxy

Contributors:

Ji, S. Y. (author) / Wang, J. F. (author) / Lim, J. W. (author) / Isshiki, M. (author)

Published in:

APPLIED SURFACE SCIENCE ; 253 ; 444-448

Publication date:

2006-01-01

Size:

5 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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