Application of N2/Ar inductively coupled plasma → the photoresist ashing for low-k dielectrics: Fid-Bau Portal

Application of N2/Ar inductively coupled plasma → the photoresist ashing for low-k dielectrics

Kim, H. W. / Myung, J. H. / Kim, N. H. / Yoo, C. G. / Suh, K. W. / Kim, S. K. / Choi, D. K. / Chung, C. W. / Kang, C. J. / Park, W. J.

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Application of N2/Ar inductively coupled plasma → the photoresist ashing for low-k dielectrics

Kim, H. W. / Myung, J. H. / Kim, N. H. / Yoo, C. G. / Suh, K. W. / Kim, S. K. / Choi, D. K. / Chung, C. W. / Kang, C. J. / Park, W. J.

Application of N2/Ar inductively coupled plasma → the photoresist ashing for low-k dielectrics

Kim, H. W. / Myung, J. H. / Kim, N. H. / Yoo, C. G. / Suh, K. W. / Kim, S. K. / Choi, D. K. / Chung, C. W. / Kang, C. J. / Park, W. J.

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Document information

Title:

Application of N2/Ar inductively coupled plasma → the photoresist ashing for low-k dielectrics

Contributors:

Kim, H. W. (author) / Myung, J. H. (author) / Kim, N. H. (author) / Yoo, C. G. (author) / Suh, K. W. (author) / Kim, S. K. (author) / Choi, D. K. (author) / Chung, C. W. (author) / Kang, C. J. (author) / Park, W. J. (author)

Published in:

JOURNAL OF MATERIALS SCIENCE ; 40 ; 3543-3544

Publication date:

2005-01-01

Size:

2 pages

ISSN:

0022-2461

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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