A platform for research: civil engineering, architecture and urbanism
Nature of the interface of (100)Ge/insulator structures with ultrathin HfO2 and GeOx(Ny) layers probed by electron spin resonance
Nature of the interface of (100)Ge/insulator structures with ultrathin HfO2 and GeOx(Ny) layers probed by electron spin resonance
Nature of the interface of (100)Ge/insulator structures with ultrathin HfO2 and GeOx(Ny) layers probed by electron spin resonance
Stesmans, A. (author) / Afanas'ev, V. V. (author)
MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 124-125 ; 179-183
2005-01-01
5 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Detection of nitrogen incorporation in nm-thin HfO2 layers on (100)Si by electron spin resonance
British Library Online Contents | 2004
|Advances in computed tomography for geomaterials : GeoX 2010
TIBKAT | 2010
|Advances in computed tomography for geomaterials : GeoX 2010
UB Braunschweig | 2010
|Advances in computed tomography for geomaterials : GeoX 2010
TIBKAT | 2010
|Electron states at the (100)Ge/HfO2 Interface
British Library Online Contents | 2004
|