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Nature of the interface of (100)Ge/insulator structures with ultrathin HfO2 and GeOx(Ny) layers probed by electron spin resonance
Nature of the interface of (100)Ge/insulator structures with ultrathin HfO2 and GeOx(Ny) layers probed by electron spin resonance
Nature of the interface of (100)Ge/insulator structures with ultrathin HfO2 and GeOx(Ny) layers probed by electron spin resonance
Stesmans, A. (Autor:in) / Afanas'ev, V. V. (Autor:in)
MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 124-125 ; 179-183
01.01.2005
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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