Detection of nitrogen incorporation in nm-thin HfO2 layers on (100)Si by electron spin resonance: Fid-Bau Portal

Detection of nitrogen incorporation in nm-thin HfO2 layers on (100)Si by electron spin resonance

Stesmans, A. / Afanas'ev, V. V. / Chen, F. / Campbell, S. A.

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Detection of nitrogen incorporation in nm-thin HfO2 layers on (100)Si by electron spin resonance

Stesmans, A. / Afanas'ev, V. V. / Chen, F. / Campbell, S. A.

Detection of nitrogen incorporation in nm-thin HfO2 layers on (100)Si by electron spin resonance

Stesmans, A. / Afanas'ev, V. V. / Chen, F. / Campbell, S. A.

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Document information

Title:

Detection of nitrogen incorporation in nm-thin HfO2 layers on (100)Si by electron spin resonance

Contributors:

Stesmans, A. (author) / Afanas'ev, V. V. (author) / Chen, F. (author) / Campbell, S. A. (author)

Published in:

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 7 ; 197-202

Publication date:

2004-01-01

Size:

6 pages

ISSN:

1369-8001

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.38152

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