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    Accurate and efficient TCAD model for the formation and dissolution of small interstitial clusters and {311} defects in silicon

    New search for: Zechner, C.
    New search for: Zographos, N.
    New search for: Matveev, D.
    New search for: Erlebach, A.

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    Accurate and efficient TCAD model for the formation and dissolution of small interstitial clusters and {311} defects in silicon

    New search for: Zechner, C.
    New search for: Zographos, N.
    New search for: Matveev, D.
    New search for: Erlebach, A.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Accurate and efficient TCAD model for the formation and dissolution of small interstitial clusters and {311} defects in silicon

    New search for: Zechner, C.
    New search for: Zographos, N.
    New search for: Matveev, D.
    New search for: Erlebach, A.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

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    Document information
    Similar titles

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    Document information
    Title:

    Accurate and efficient TCAD model for the formation and dissolution of small interstitial clusters and {311} defects in silicon

    Contributors:

    Zechner, C. (author) / Zographos, N. (author) / Matveev, D. (author) / Erlebach, A. (author)

    Published in:

    MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 124-125 ; 401-403

    Publication date:

    2005-01-01

    Size:

    3 pages

    ISSN:

    0921-5107

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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