Evolution of boron-interstitial clusters in preamorphized silicon without the contribution of end-of-range defects: Fid-Bau Portal

Evolution of boron-interstitial clusters in preamorphized silicon without the contribution of end-of-range defects

Aboy, M. / Pelaz, L. / Lopez, P. / Bruno, E. / Mirabella, S. / Napolitani, E.

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Evolution of boron-interstitial clusters in preamorphized silicon without the contribution of end-of-range defects

Aboy, M. / Pelaz, L. / Lopez, P. / Bruno, E. / Mirabella, S. / Napolitani, E.

Evolution of boron-interstitial clusters in preamorphized silicon without the contribution of end-of-range defects

Aboy, M. / Pelaz, L. / Lopez, P. / Bruno, E. / Mirabella, S. / Napolitani, E.

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Document information

Title:

Evolution of boron-interstitial clusters in preamorphized silicon without the contribution of end-of-range defects

Contributors:

Aboy, M. (author) / Pelaz, L. (author) / Lopez, P. (author) / Bruno, E. (author) / Mirabella, S. (author) / Napolitani, E. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING B ADVANCED FUNCTIONAL SOLID STATE MATERIALS ; 154-155 ; 247-251

Publication date:

2008-01-01

Size:

5 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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