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New Type of Defects Explored by Theory: Silicon Interstitial Clusters in SiC

Gali, A. / Hornos, T. / Son, N.T. / Janzen, E.

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New Type of Defects Explored by Theory: Silicon Interstitial Clusters in SiC

Gali, A. / Hornos, T. / Son, N.T. / Janzen, E.

New Type of Defects Explored by Theory: Silicon Interstitial Clusters in SiC

Gali, A. / Hornos, T. / Son, N.T. / Janzen, E.

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Document information

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Document information

Title:

New Type of Defects Explored by Theory: Silicon Interstitial Clusters in SiC

Contributors:

Gali, A. (author) / Hornos, T. (author) / Son, N.T. (author) / Janzen, E. (author)

Published in:

MATERIALS SCIENCE FORUM ; 600/603 ; 413-416

Publication date:

2009-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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