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    Study of the unipolar bias recharging phenomenon in the nonvolatile memory cells containing silicon nanodots

    New search for: Turchanikov, V. I.
    New search for: Nazarov, A. N.
    New search for: Lysenko, V. S.
    New search for: Winkler, O.
    New search for: Spangenberg, B.
    New search for: Kurz, H.

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    Study of the unipolar bias recharging phenomenon in the nonvolatile memory cells containing silicon nanodots

    New search for: Turchanikov, V. I.
    New search for: Nazarov, A. N.
    New search for: Lysenko, V. S.
    New search for: Winkler, O.
    New search for: Spangenberg, B.
    New search for: Kurz, H.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Study of the unipolar bias recharging phenomenon in the nonvolatile memory cells containing silicon nanodots

    New search for: Turchanikov, V. I.
    New search for: Nazarov, A. N.
    New search for: Lysenko, V. S.
    New search for: Winkler, O.
    New search for: Spangenberg, B.
    New search for: Kurz, H.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

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    Check availability in my library
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    Document information
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    Document information
    Title:

    Study of the unipolar bias recharging phenomenon in the nonvolatile memory cells containing silicon nanodots

    Contributors:

    Turchanikov, V. I. (author) / Nazarov, A. N. (author) / Lysenko, V. S. (author) / Winkler, O. (author) / Spangenberg, B. (author) / Kurz, H. (author)

    Published in:

    MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 124-125 ; 517-520

    Publication date:

    2005-01-01

    Size:

    4 pages

    ISSN:

    0921-5107

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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