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Silane overpressure post-implant annealing of Al dopants in SiC: Cold wall CVD apparatus
Silane overpressure post-implant annealing of Al dopants in SiC: Cold wall CVD apparatus
Silane overpressure post-implant annealing of Al dopants in SiC: Cold wall CVD apparatus
Rao, S. (author) / Bergamini, F. (author) / Nipoti, R. (author) / Saddow, S. E. (author)
APPLIED SURFACE SCIENCE ; 252 ; 3837-3842
2006-01-01
6 pages
Article (Journal)
English
DDC:
621.35
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Post-Implantation Annealing in a Silane Ambient Using Hot-Wall CVD
British Library Online Contents | 2006
|British Library Online Contents | 2006
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