Simultaneous formation of Si and Ge nanocrystals in SiO2 by one step ion implantation: Fid-Bau Portal

Simultaneous formation of Si and Ge nanocrystals in SiO2 by one step ion implantation

Giri, P. K. / Kesavamoorthy, R. / Bhattacharya, S. / Panigrahi, B. K. / Nair, K. G.

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Simultaneous formation of Si and Ge nanocrystals in SiO2 by one step ion implantation

Giri, P. K. / Kesavamoorthy, R. / Bhattacharya, S. / Panigrahi, B. K. / Nair, K. G.

Simultaneous formation of Si and Ge nanocrystals in SiO2 by one step ion implantation

Giri, P. K. / Kesavamoorthy, R. / Bhattacharya, S. / Panigrahi, B. K. / Nair, K. G.

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Check availability in my library

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Document information

Title:

Simultaneous formation of Si and Ge nanocrystals in SiO2 by one step ion implantation

Contributors:

Giri, P. K. (author) / Kesavamoorthy, R. (author) / Bhattacharya, S. (author) / Panigrahi, B. K. (author) / Nair, K. G. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 128 ; 201-204

Publication date:

2006-01-01

Size:

4 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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