Preparation of arsenic-doped Ge nanocrystals embedded in SiO2 film by ion implantation and thermal neutron irradiation: Fid-Bau Portal

Preparation of arsenic-doped Ge nanocrystals embedded in SiO2 film by ion implantation and thermal neutron irradiation

Dun, S. / Lu, T. / Hu, Y. / Hu, Q. / You, C. / Huang, N.

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Preparation of arsenic-doped Ge nanocrystals embedded in SiO2 film by ion implantation and thermal neutron irradiation

Dun, S. / Lu, T. / Hu, Y. / Hu, Q. / You, C. / Huang, N.

Preparation of arsenic-doped Ge nanocrystals embedded in SiO2 film by ion implantation and thermal neutron irradiation

Dun, S. / Lu, T. / Hu, Y. / Hu, Q. / You, C. / Huang, N.

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Order at Subito €

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Document information

Title:

Preparation of arsenic-doped Ge nanocrystals embedded in SiO2 film by ion implantation and thermal neutron irradiation

Contributors:

Dun, S. (author) / Lu, T. (author) / Hu, Y. (author) / Hu, Q. (author) / You, C. (author) / Huang, N. (author)

Published in:

MATERIALS LETTERS ; 62 ; 3617-3619

Publication date:

2008-01-01

Size:

3 pages

ISSN:

0167-577X

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.1105 / 530

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