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    Interface characterization and indium content of indium-rich quantum dots in InGaN/GaN multiple quantum wells

    New search for: Liu, C. P.
    New search for: Lai, Y. L.
    New search for: Chen, Z. Q.

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    Interface characterization and indium content of indium-rich quantum dots in InGaN/GaN multiple quantum wells

    New search for: Liu, C. P.
    New search for: Lai, Y. L.
    New search for: Chen, Z. Q.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Interface characterization and indium content of indium-rich quantum dots in InGaN/GaN multiple quantum wells

    New search for: Liu, C. P.
    New search for: Lai, Y. L.
    New search for: Chen, Z. Q.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

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    Document information
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    Document information
    Title:

    Interface characterization and indium content of indium-rich quantum dots in InGaN/GaN multiple quantum wells

    Contributors:

    Liu, C. P. (author) / Lai, Y. L. (author) / Chen, Z. Q. (author)

    Published in:

    APPLIED SURFACE SCIENCE ; 252 ; 3922-3927

    Publication date:

    2006-01-01

    Size:

    6 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.35

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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