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Properties of AlN epitaxial layers on 6H-SiC substrate grown by sublimation in argon, nitrogen, and their mixtures
Properties of AlN epitaxial layers on 6H-SiC substrate grown by sublimation in argon, nitrogen, and their mixtures
Properties of AlN epitaxial layers on 6H-SiC substrate grown by sublimation in argon, nitrogen, and their mixtures
Beshkova, M. (author) / Zakhariev, Z. (author) / Abrashev, M. V. (author) / Birch, J. (author) / Postovit, A. (author) / Yakimova, R. (author)
MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 129 ; 228-231
2006-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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