Epitaxial GaN Film Grown at Low Temperature by Hydrogen-Plasma Assisted MOCVD: Fid-Bau Portal

Epitaxial GaN Film Grown at Low Temperature by Hydrogen-Plasma Assisted MOCVD

Yam, F. K. / Hassan, Z. / Ibrahim, K. / Barmawi, M. / Sugianto / Budiman, M. / Arifin, P.

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Epitaxial GaN Film Grown at Low Temperature by Hydrogen-Plasma Assisted MOCVD

Yam, F. K. / Hassan, Z. / Ibrahim, K. / Barmawi, M. / Sugianto / Budiman, M. / Arifin, P.

Epitaxial GaN Film Grown at Low Temperature by Hydrogen-Plasma Assisted MOCVD

Yam, F. K. / Hassan, Z. / Ibrahim, K. / Barmawi, M. / Sugianto / Budiman, M. / Arifin, P.

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Check availability in my library

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Document information

Title:

Epitaxial GaN Film Grown at Low Temperature by Hydrogen-Plasma Assisted MOCVD

Contributors:

Yam, F. K. (author) / Hassan, Z. (author) / Ibrahim, K. (author) / Barmawi, M. (author) / Sugianto (author) / Budiman, M. (author) / Arifin, P. (author)

Published in:

MATERIALS SCIENCE FORUM ; 517 ; 9-12

Publication date:

2006-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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