Epitaxial growth of AlN films on Si substrates by ECR plasma assisted MOCVD under controlled plasma conditions in afterglow region: Fid-Bau Portal

Epitaxial growth of AlN films on Si substrates by ECR plasma assisted MOCVD under controlled plasma conditions in afterglow region

Yasui, K. / Hoshino, S. / Akahane, T.

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Epitaxial growth of AlN films on Si substrates by ECR plasma assisted MOCVD under controlled plasma conditions in afterglow region

Yasui, K. / Hoshino, S. / Akahane, T.

Epitaxial growth of AlN films on Si substrates by ECR plasma assisted MOCVD under controlled plasma conditions in afterglow region

Yasui, K. / Hoshino, S. / Akahane, T.

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Document information

Title:

Epitaxial growth of AlN films on Si substrates by ECR plasma assisted MOCVD under controlled plasma conditions in afterglow region

Contributors:

Yasui, K. (author) / Hoshino, S. (author) / Akahane, T. (author)

Published in:

APPLIED SURFACE SCIENCE ; 159-160 ; 462-467

Publication date:

2000-01-01

Size:

6 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

Yasui, K. / Hoshino, S. / Akahane, T. | British Library Online Contents | 2000

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Shen, X. Q. / Okumura, H. | British Library Online Contents | 2004

Epitaxial GaN Film Grown at Low Temperature by Hydrogen-Plasma Assisted MOCVD

Yam, F. K. / Hassan, Z. / Ibrahim, K. et al. | British Library Online Contents | 2006

MOCVD growth of non-epitaxial and epitaxial ZnS thin films

Fang, J. / Holloway, P. H. / Yu, J. E. et al. | British Library Online Contents | 1993