Indium Composition Dependence of the Size Uniformity of InGaAs Quantum Dots on (311)B GaAs Grown by Molecular Beam Epitaxy: Fid-Bau Portal

Indium Composition Dependence of the Size Uniformity of InGaAs Quantum Dots on (311)B GaAs Grown by Molecular Beam Epitaxy

JIANG, W. / XU, H. / XU, B. / ZHOU, W. / GONG, Q. / DING, D. / LIANG, J. / WANG, Z.

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Indium Composition Dependence of the Size Uniformity of InGaAs Quantum Dots on (311)B GaAs Grown by Molecular Beam Epitaxy

JIANG, W. / XU, H. / XU, B. / ZHOU, W. / GONG, Q. / DING, D. / LIANG, J. / WANG, Z.

Indium Composition Dependence of the Size Uniformity of InGaAs Quantum Dots on (311)B GaAs Grown by Molecular Beam Epitaxy

JIANG, W. / XU, H. / XU, B. / ZHOU, W. / GONG, Q. / DING, D. / LIANG, J. / WANG, Z.

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Title:

Indium Composition Dependence of the Size Uniformity of InGaAs Quantum Dots on (311)B GaAs Grown by Molecular Beam Epitaxy

Contributors:

JIANG, W. (author) / XU, H. (author) / XU, B. (author) / ZHOU, W. (author) / GONG, Q. (author) / DING, D. (author) / LIANG, J. (author) / WANG, Z. (author)

Published in:

JOURNAL OF MATERIALS SCIENCE AND TECHNOLOGY -SHENYANG- ; 15 ; 523-526

Publication date:

1999-01-01

Size:

4 pages

ISSN:

1005-0302

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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