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Electron irradiation-induced defects in InP pre-annealed at high temperature

Zhao, Y. W. / Dong, Z. Y. / Deng, A. H.

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Electron irradiation-induced defects in InP pre-annealed at high temperature

Zhao, Y. W. / Dong, Z. Y. / Deng, A. H.

Electron irradiation-induced defects in InP pre-annealed at high temperature

Zhao, Y. W. / Dong, Z. Y. / Deng, A. H.

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Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Electron irradiation-induced defects in InP pre-annealed at high temperature

Contributors:

Zhao, Y. W. (author) / Dong, Z. Y. (author) / Deng, A. H. (author)

Published in:

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 9 ; 380-383

Publication date:

2006-01-01

Size:

4 pages

ISSN:

1369-8001

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.38152

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