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Defects in Ge-doped Cz-Si annealed under high stress

Misiuk, A. / Yang, D. / Surma, B. / Londos, C. A. / Bak-Misiuk, J. / Andrianakis, A.

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Defects in Ge-doped Cz-Si annealed under high stress

Misiuk, A. / Yang, D. / Surma, B. / Londos, C. A. / Bak-Misiuk, J. / Andrianakis, A.

Defects in Ge-doped Cz-Si annealed under high stress

Misiuk, A. / Yang, D. / Surma, B. / Londos, C. A. / Bak-Misiuk, J. / Andrianakis, A.

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Document information

Title:

Defects in Ge-doped Cz-Si annealed under high stress

Contributors:

Misiuk, A. (author) / Yang, D. (author) / Surma, B. (author) / Londos, C. A. (author) / Bak-Misiuk, J. (author) / Andrianakis, A. (author)

Published in:

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 9 ; 82-87

Publication date:

2006-01-01

Size:

6 pages

ISSN:

1369-8001

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.38152

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