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    The influence of impurity profile on ultra-shallow GaAs sidewall tunnel junction characteristics

    New search for: Ohno, T.
    New search for: Oyama, Y.
    New search for: Nishizawa, J. i.

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    The influence of impurity profile on ultra-shallow GaAs sidewall tunnel junction characteristics

    New search for: Ohno, T.
    New search for: Oyama, Y.
    New search for: Nishizawa, J. i.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    The influence of impurity profile on ultra-shallow GaAs sidewall tunnel junction characteristics

    New search for: Ohno, T.
    New search for: Oyama, Y.
    New search for: Nishizawa, J. i.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
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    Document information
    Similar titles

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    Document information
    Title:

    The influence of impurity profile on ultra-shallow GaAs sidewall tunnel junction characteristics

    Contributors:

    Ohno, T. (author) / Oyama, Y. (author) / Nishizawa, J. i. (author)

    Published in:

    APPLIED SURFACE SCIENCE ; 252 ; 7283-7285

    Publication date:

    2006-01-01

    Size:

    3 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.35

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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