Fundamental characterization of the effect of nitride sidewall spacer process on boron dose loss in ultra-shallow junction formation: Fid-Bau Portal

Fundamental characterization of the effect of nitride sidewall spacer process on boron dose loss in ultra-shallow junction formation

Kohli, P. / Chakravarthi, S. / Jain, A. / Bu, H. / Mehrotra, M. / Dunham, S. T. / Banerjee, S. K.

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Fundamental characterization of the effect of nitride sidewall spacer process on boron dose loss in ultra-shallow junction formation

Kohli, P. / Chakravarthi, S. / Jain, A. / Bu, H. / Mehrotra, M. / Dunham, S. T. / Banerjee, S. K.

Fundamental characterization of the effect of nitride sidewall spacer process on boron dose loss in ultra-shallow junction formation

Kohli, P. / Chakravarthi, S. / Jain, A. / Bu, H. / Mehrotra, M. / Dunham, S. T. / Banerjee, S. K.

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Title:

Fundamental characterization of the effect of nitride sidewall spacer process on boron dose loss in ultra-shallow junction formation

Contributors:

Kohli, P. (author) / Chakravarthi, S. (author) / Jain, A. (author) / Bu, H. (author) / Mehrotra, M. (author) / Dunham, S. T. (author) / Banerjee, S. K. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 114/115 ; 390-396

Publication date:

2004-01-01

Size:

7 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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