Fachinformationsdienst BAUdigital

A platform for research: civil engineering, architecture and urbanism

    Effects of Si doping on the structural and electrical properties of Ge2Sb2Te5 films for phase change random access memory

    New search for: Qiao, B.
    New search for: Feng, J.
    New search for: Lai, Y.
    New search for: Ling, Y.
    New search for: Lin, Y.
    New search for: Tang, T. a.
    New search for: Cai, B.
    New search for: Chen, B.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Effects of Si doping on the structural and electrical properties of Ge2Sb2Te5 films for phase change random access memory

    New search for: Qiao, B.
    New search for: Feng, J.
    New search for: Lai, Y.
    New search for: Ling, Y.
    New search for: Lin, Y.
    New search for: Tang, T. a.
    New search for: Cai, B.
    New search for: Chen, B.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Effects of Si doping on the structural and electrical properties of Ge2Sb2Te5 films for phase change random access memory

    New search for: Qiao, B.
    New search for: Feng, J.
    New search for: Lai, Y.
    New search for: Ling, Y.
    New search for: Lin, Y.
    New search for: Tang, T. a.
    New search for: Cai, B.
    New search for: Chen, B.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Effects of Si doping on the structural and electrical properties of Ge2Sb2Te5 films for phase change random access memory

    Contributors:

    Qiao, B. (author) / Feng, J. (author) / Lai, Y. (author) / Ling, Y. (author) / Lin, Y. (author) / Tang, T. a. (author) / Cai, B. (author) / Chen, B. (author)

    Published in:

    APPLIED SURFACE SCIENCE ; 252 ; 8404-8409

    Publication date:

    2006-01-01

    Size:

    6 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.35

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

    Similar titles

    Ge2Sb2Te5 and PbZr0.30Ti0.70O3 composite films for application in phase change random access memory

    Song, S. / Song, Z. / Liu, B. et al. | British Library Online Contents | 2010

    Study on nitrogen doped Ge2Sb2Te5 films for phase change memory

    Shin, M. J. / Kim, S. M. / Choi, D. J. et al. | British Library Online Contents | 2005

    Ge2Sb2Te5/SnSe2 nanocomposite multilayer thin films for phase change memory application

    Feng, X. / Wen, T. / Zhai, J. et al. | British Library Online Contents | 2014

    Ge2Sb2Te5/SnSe2 nanocomposite multilayer thin films for phase change memory application

    Feng, Xiaoyi / Wen, Ting / Zhai, Jiwei et al. | British Library Online Contents | 2014

    Crystallization characteristics of Mg-doped Ge2Sb2Te5 films for phase change memory applications

    Fu, J. / Shen, X. / Nie, Q. et al. | British Library Online Contents | 2013

    Back to top