Crystallization characteristics of Mg-doped Ge2Sb2Te5 films for phase change memory applications: Fid-Bau Portal

Crystallization characteristics of Mg-doped Ge2Sb2Te5 films for phase change memory applications

Fu, J. / Shen, X. / Nie, Q. / Wang, G. / Wu, L. / Dai, S. / Xu, T. / Wang, R. P.

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Crystallization characteristics of Mg-doped Ge2Sb2Te5 films for phase change memory applications

Fu, J. / Shen, X. / Nie, Q. / Wang, G. / Wu, L. / Dai, S. / Xu, T. / Wang, R. P.

Crystallization characteristics of Mg-doped Ge2Sb2Te5 films for phase change memory applications

Fu, J. / Shen, X. / Nie, Q. / Wang, G. / Wu, L. / Dai, S. / Xu, T. / Wang, R. P.

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Access via TIB

Check availability in my library

Order at Subito €

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Document information

Title:

Crystallization characteristics of Mg-doped Ge2Sb2Te5 films for phase change memory applications

Contributors:

Fu, J. (author) / Shen, X. (author) / Nie, Q. (author) / Wang, G. (author) / Wu, L. (author) / Dai, S. (author) / Xu, T. (author) / Wang, R. P. (author)

Published in:

APPLIED SURFACE SCIENCE ; 264 ; 269-272

Publication date:

2013-01-01

Size:

4 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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