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Ge2Sb2Te5 and PbZr0.30Ti0.70O3 composite films for application in phase change random access memory
Ge2Sb2Te5 and PbZr0.30Ti0.70O3 composite films for application in phase change random access memory
Ge2Sb2Te5 and PbZr0.30Ti0.70O3 composite films for application in phase change random access memory
MATERIALS LETTERS ; 64 ; 317-319
2010-01-01
3 pages
Article (Journal)
English
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