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Infrared absorption peaks in nitrogen doped CZ silicon

Inoue, N. / Nakatsu, M. / Ono, H. / Inoue, Y.

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Infrared absorption peaks in nitrogen doped CZ silicon

Inoue, N. / Nakatsu, M. / Ono, H. / Inoue, Y.

Infrared absorption peaks in nitrogen doped CZ silicon

Inoue, N. / Nakatsu, M. / Ono, H. / Inoue, Y.

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Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Infrared absorption peaks in nitrogen doped CZ silicon

Contributors:

Inoue, N. (author) / Nakatsu, M. (author) / Ono, H. (author) / Inoue, Y. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 134 ; 202-206

Publication date:

2006-01-01

Size:

5 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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