Shifts of the Infrared Absorption Peaks of Oxygen in Silicon Caused by Germanium-Doping: Fid-Bau Portal

Shifts of the Infrared Absorption Peaks of Oxygen in Silicon Caused by Germanium-Doping

Yamada-Kaneta, H. / Kaneta, C. / Ogawa, T.

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Shifts of the Infrared Absorption Peaks of Oxygen in Silicon Caused by Germanium-Doping

Yamada-Kaneta, H. / Kaneta, C. / Ogawa, T.

Shifts of the Infrared Absorption Peaks of Oxygen in Silicon Caused by Germanium-Doping

Yamada-Kaneta, H. / Kaneta, C. / Ogawa, T.

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Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Shifts of the Infrared Absorption Peaks of Oxygen in Silicon Caused by Germanium-Doping

Contributors:

Yamada-Kaneta, H. (author) / Kaneta, C. (author) / Ogawa, T. (author) / Taguchi, T.

Published in:

Shallow Impurities in Semiconductors ; 207

MATERIALS SCIENCE FORUM

Publication date:

1993-01-01

Size:

207 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

Unknown

Classification:

DDC: 620.11

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