Fachinformationsdienst BAUdigital

A platform for research: civil engineering, architecture and urbanism

    Formation and Properties of Schottky Diodes on 4H-SiC after High Temperature Annealing with Graphite Encapsulation

    New search for: Wang, Y.
    New search for: Mikhov, M. K.
    New search for: Skromme, B. J.
    New search for: Devaty, R. P.
    New search for: Larkin, D. J.
    New search for: Saddow, S. E.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Formation and Properties of Schottky Diodes on 4H-SiC after High Temperature Annealing with Graphite Encapsulation

    New search for: Wang, Y.
    New search for: Mikhov, M. K.
    New search for: Skromme, B. J.
    New search for: Devaty, R. P.
    New search for: Larkin, D. J.
    New search for: Saddow, S. E.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Formation and Properties of Schottky Diodes on 4H-SiC after High Temperature Annealing with Graphite Encapsulation

    New search for: Wang, Y.
    New search for: Mikhov, M. K.
    New search for: Skromme, B. J.
    New search for: Devaty, R. P.
    New search for: Larkin, D. J.
    New search for: Saddow, S. E.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Formation and Properties of Schottky Diodes on 4H-SiC after High Temperature Annealing with Graphite Encapsulation

    Contributors:

    Wang, Y. (author) / Mikhov, M. K. (author) / Skromme, B. J. (author) / Devaty, R. P. / Larkin, D. J. / Saddow, S. E.

    Published in:

    Silicon Carbide and Related Materials - 2005 ; 915-918

    MATERIALS SCIENCE FORUM ; 527/529

    Publication date:

    2006-01-01

    Size:

    4 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

    Similar titles

    High temperature/high power Schottky diodes

    Wright, N. G. / O'Neill, A. G. / Johnson, C. M. | British Library Online Contents | 1997

    Hydrogen Detection with Semimetal Graphite-ZnO (InP,GaN) Schottky Diodes

    Yatskiv, R. / Zdansky, K. / Grym, J. | British Library Online Contents | 2013

    Annealing effect on Schottky barrier inhomogeneity of graphene/n-type Si Schottky diodes

    Lin, Y. J. / Lin, J. H. | British Library Online Contents | 2014

    Temperature Dependence of 4H-SiC JBS and Schottky Diodes after High Temperature Treatment of Contact Metal

    Perez, R. / Mestres, N. / Tournier, D. et al. | British Library Online Contents | 2005

    Improvements in the Electrical Performance of High Voltage 4H-SiC Schottky Diodes by Hydrogen Annealing

    Wahab, Q. u. / Macak, E. B. / Zhang, J. et al. | British Library Online Contents | 2001

    Back to top