Improvements in the Electrical Performance of High Voltage 4H-SiC Schottky Diodes by Hydrogen Annealing: Fid-Bau Portal

Improvements in the Electrical Performance of High Voltage 4H-SiC Schottky Diodes by Hydrogen Annealing

Wahab, Q. u. / Macak, E. B. / Zhang, J. / Madsen, L. D. / Janzen, E.

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Improvements in the Electrical Performance of High Voltage 4H-SiC Schottky Diodes by Hydrogen Annealing

Wahab, Q. u. / Macak, E. B. / Zhang, J. / Madsen, L. D. / Janzen, E.

Improvements in the Electrical Performance of High Voltage 4H-SiC Schottky Diodes by Hydrogen Annealing

Wahab, Q. u. / Macak, E. B. / Zhang, J. / Madsen, L. D. / Janzen, E.

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Check availability in my library

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Document information

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Document information

Title:

Improvements in the Electrical Performance of High Voltage 4H-SiC Schottky Diodes by Hydrogen Annealing

Contributors:

Wahab, Q. u. (author) / Macak, E. B. (author) / Zhang, J. (author) / Madsen, L. D. (author) / Janzen, E. (author)

Published in:

MATERIALS SCIENCE FORUM ; 353/356 ; 691-694

Publication date:

2001-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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