High Temperature Operation of Silicon Carbide Schottky Diodes with Recoverable Avalanche Breakdown: Fid-Bau Portal

High Temperature Operation of Silicon Carbide Schottky Diodes with Recoverable Avalanche Breakdown

Vassilevski, K. V. / Nikitina, I. P. / Bhatnagar, P. / Horsfall, A. B. / Wright, N. G. / O Neill, A. G. / Uren, M. J. / Hilton, K. / Munday, A. / Hydes, A.

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High Temperature Operation of Silicon Carbide Schottky Diodes with Recoverable Avalanche Breakdown

Vassilevski, K. V. / Nikitina, I. P. / Bhatnagar, P. / Horsfall, A. B. / Wright, N. G. / O Neill, A. G. / Uren, M. J. / Hilton, K. / Munday, A. / Hydes, A.

High Temperature Operation of Silicon Carbide Schottky Diodes with Recoverable Avalanche Breakdown

Vassilevski, K. V. / Nikitina, I. P. / Bhatnagar, P. / Horsfall, A. B. / Wright, N. G. / O Neill, A. G. / Uren, M. J. / Hilton, K. / Munday, A. / Hydes, A.

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Title:

High Temperature Operation of Silicon Carbide Schottky Diodes with Recoverable Avalanche Breakdown

Contributors:

Vassilevski, K. V. (author) / Nikitina, I. P. (author) / Bhatnagar, P. (author) / Horsfall, A. B. (author) / Wright, N. G. (author) / O Neill, A. G. (author) / Uren, M. J. (author) / Hilton, K. (author) / Munday, A. (author) / Hydes, A. (author)

Published in:

Silicon Carbide and Related Materials - 2005 ; 931-934

MATERIALS SCIENCE FORUM ; 527/529

Publication date:

2006-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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